ELECTRONIC CHARGE-DENSITIES IN PBSE AND PBTE

被引：42

作者：

SCHLUTER, M

MARTINEZ, G

COHEN, ML

机构：

[1] UNIV CALIF,LAWRENCE BERKELEY LAB,LAWRENCE BERKELEY LABORATORY,INORG MAT RES DIV,BERKELEY,CA 94720

[2] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.11.3808

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3808 / 3813

页数：6

共 7 条

[1] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[2] ELECTRONIC CHARGE DENSITIES IN SEMICONDUCTORS [J].

COHEN, ML .

[3] ENERGY BANDS IN PBTE [J].

CONKLIN, JB ;

JOHNSON, LE ;

PRATT, GW .

PHYSICAL REVIEW, 1965, 137 (4A) :1282-&

[4]

MARTINEZ G, TO BE PUBLISHED

[5]

SCHLUTER M, UNPUBLISHED

[6] ELECTRONIC CHARGE-DENSITY IN PBTE [J].

TSANG, YW ;

COHEN, ML .

[7]

1972, HDB CHEMISTRY PHYSIC, pF177