ROLE OF CONTACTS TO NUCLEAR RADIATION DETECTORS

被引:11
作者
TOVE, PA [1 ]
机构
[1] UNIV UPPSALA, INST PHYS & TECHNOL, DEPT ELECTR, UPPSALA, SWEDEN
来源
NUCLEAR INSTRUMENTS & METHODS | 1976年 / 133卷 / 03期
关键词
D O I
10.1016/0029-554X(76)90428-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:445 / 452
页数:8
相关论文
共 31 条
[1]  
[Anonymous], 1968, SEMICONDUCTOR DETECT
[3]  
BALDINGER E, 1966, HELV PHYS ACTA, V39, P27
[4]   BEMERKUNG ZU DEN LADUNGSVERLUSTEN IN SPERRSCHICHTZAHLERN [J].
BALDINGER, E .
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1964, 15 (01) :90-&
[5]   DETERMINATION OF HAFNIUM-P-TYPE SILICON SCHOTTKY-BARRIER HEIGHT [J].
BEGUWALA, M ;
CROWELL, CR .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2792-2794
[6]   INFLUENCE OF CARRIER DIFFUSION EFFECTS ON WINDOW THICKNESS OF SEMICONDUCTOR DETECTORS [J].
CAYWOOD, JM ;
MEAD, CA ;
MAYER, JW .
NUCLEAR INSTRUMENTS & METHODS, 1970, 79 (02) :329-&
[7]  
DEARNALLY G, 1966, SEMICONDUCTOR COUNTE, P115
[8]   CONTINUOUS HIGH-FIELD OPERATION OF CDTE GAMMA-DETECTORS WITH MIS-TYPE CONTACTS [J].
EICHINGER, P ;
HALDER, N ;
KEMMER, J .
NUCLEAR INSTRUMENTS & METHODS, 1974, 117 (01) :305-307
[9]   NEW TYPE OF NON-INJECTING BACT CONTACT FOR TOTALLY DEPLETED SILICON SURFACE BARRIER DETECTORS [J].
ENGLAND, JBA ;
HAMMER, VW .
NUCLEAR INSTRUMENTS & METHODS, 1971, 96 (01) :81-&
[10]   THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON [J].
ENGSTROM, O ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :831-837