ELECTRICAL-PROPERTIES OF THERMAL DONORS FORMED IN CZ-SI DURING HEAT-TREATMENT AT 450-DEGREES-C

被引：16

作者：

EMTSEV, VV ^{[1
]}

DALUDA, YN ^{[1
]}

GAWORZEWSKI, P ^{[1
]}

SCHMALZ, K ^{[1
]}

机构：

[1] ACAD SCI GDR,INST SEMICOND PHYS,DDR-1200 FRANKFURT,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 02期

关键词：

D O I：

10.1002/pssa.2210850232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：575 / 584

页数：10

共 14 条

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STAVOLA, M .

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[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4]

BLATT FJ, 1968, PHYSICS ELECTRONIC C

[5]

Brelot A., 1971, RAD EFFECTS SEMICOND, P161

[6]

Brelot A., 1973, I PHYS C SER, P191

[7] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :699-707

[8]

MASHOVEZ TV, 1982, FIZ TEKH POLUPROVODN, V16, P3

[9]

MULLER S, 1981, THESIS AMSTERDAM

[10] SPECTROSCOPIC STUDIES OF 450-DEGREES-C THERMAL DONORS IN SILICON [J].

PAJOT, B ;

COMPAIN, H ;

LEROUILLE, J ;

CLERJAUD, B .

PHYSICA B & C, 1983, 117 (MAR) :110-112

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