P-I-N CDTE GAMMA-RAY DETECTORS BY LIQUID-PHASE EPITAXY (LPE)

被引：21

作者：

SHIN, SH ^{[1
]}

NIIZAWA, GT ^{[1
]}

PASKO, JG ^{[1
]}

BOSTRUP, GL ^{[1
]}

RYAN, FJ ^{[1
]}

KHOSHNEVISAN, M ^{[1
]}

WESTMARK, CI ^{[1
]}

FULLER, C ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1109/TNS.1985.4336879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：487 / 491

页数：5

共 10 条

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[6] HGCDTE PHOTO-DIODES FORMED BY DOUBLE-LAYER LIQUID-PHASE EPITAXIAL-GROWTH [J].

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CHEUNG, DT .

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[7] CURRENT POSSIBILITIES AND LIMITATIONS OF CADMIUM TELLURIDE DETECTORS [J].

SIFFERT, P .

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[8]

SIFFERT P, 1983, MATER RES SOC S P, V16, P87

[9] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J].

WANG, CC ;

SHIN, SH ;

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VANDERWYCK, AHB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :175-179

[10] CADMIUM TELLURIDE AND MERCURIC IODIDE GAMMA-RADIATION DETECTORS [J].

WHITED, RC ;

SCHIEBER, MM .

NUCLEAR INSTRUMENTS & METHODS, 1979, 162 (1-3) :113-123

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