PHOTOEMISSION CORE LEVEL SHIFTS IN GD SILICIDES

被引：18

作者：

PUPPIN, E ^{[1
]}

LINDAU, I ^{[1
]}

ABBATI, I ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 77卷 / 12期

关键词：

D O I：

10.1016/0038-1098(91)90358-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoemission core spectra from Gd silicides (Gd3Si5, GdSi and Gd5Si3) are presented. With respect to pure crystalline Si the Si 2p and 2s levels shift toward lower binding energies as follows: 0.4eV in Gd3Si5, 0.7 eV in GdSi and 1.2 eV in Gd5Si3. On the contrary, the Gd levels (4f, 5p, 4d and 4p) do not shift within the experimental sensitivity. The observed shifts are discussed in connection with the available information on the valence electron states of Gd silicides.

引用

页码：983 / 986

页数：4

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