IN-SITU AND REAL-TIME MONITORING OF THE INSE SURFACE BY ATOMIC-FORCE MICROSCOPY WITH ATOMIC-RESOLUTION DURING ELECTROCHEMICAL REACTIONS

An atomic force microscope (AFM) was employed to observe the surface atomic structure of the van der Waals face of InSe, one of III-VI compound semiconductors with a layered structure, in water and in electrolyte solutions. In electrolyte solutions the surface structure was monitored by AFM in real time and potential was scanned negative to positive and scanned back. The atomic image was clearly resolved at relatively negative potential, but the atomic image was completely lost at potentials more positive than 0 V, because of the formation of an amorphous Se layer. The atomic image was recovered when potential was returned to negative (< -0.7 V) as a result of reductive removal of the Se amorphous layer.