RESISTIVITY SATURATION IN ALKALI-DOPED C-60

被引：32

作者：

HOU, JG

LU, L

CRESPI, VH

XIANG, XD

ZETTL, A

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 12期

基金：

美国国家科学基金会;

关键词：

FULLERENES; ELECTRON-PHONON INTERACTIONS; ELECTRONIC TRANSPORT;

D O I：

10.1016/0038-1098(94)00915-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The high-temperature resisitivity of K and Rb-doped C-60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with p(sat)(Rb) approximate to 6 +/- 3m Omega-cm, corresponding to a saturation mean free path of l(sat)(Rb) approximate to 1 +/- 0.5 Angstrom. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that p(sat)(K) > 3m Omega-cm and l(sat)(K) < 1.5 Angstrom. The electronic stakes at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

引用

页码：973 / 977

页数：5

共 29 条

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