METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD WITHOUT AN OHMIC REFERENCE CONTACT-1-CARRIER SYSTEM

被引：6

作者：

GOODMAN, AM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 04期

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D O I：

10.1063/1.1714320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1411 / &

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[2] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
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[3] EVAPORATED METALLIC CONTACTS TO CONDUCTING CADMIUM SULFIDE SINGLE CRYSTALS
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 573 - &
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[5] STATIC SPACE CHARGE AND CAPACITANCE FOR 2-BLOCKING ELECTRODES
MACDONALD, JR
[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (03) : 806 - 816
[6] MACDONALD JR, 1960, SOLID STATE ELECTRON, V5, P11