ONE-DIMENSIONAL ELECTRONIC SYSTEMS IN ULTRA-FINE MESA ETCHED INGAAS-INALAS-INP QUANTUM WIRES

被引：9

作者：

KERN, K ^{[1
]}

DEMEL, T ^{[1
]}

HEITMANN, D ^{[1
]}

GRAMBOW, P ^{[1
]}

PLOOG, K ^{[1
]}

RAZEGHI, M ^{[1
]}

机构：

[1] THOMSON CSF,F-91401 ORSAY,FRANCE

来源：

SURFACE SCIENCE | 1990年 / 229卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90883-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV. © 1990.

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收藏

页码：256 / 259

页数：4

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