LOW-TEMPERATURE ADSORPTION AND REACTION OF NO-ON GAAS(110)

被引：9

作者：

KERN, K ^{[1
]}

CHABAL, Y ^{[1
]}

HIGASHI, G ^{[1
]}

FELDE, AV ^{[1
]}

CARDILLO, M ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, IGV, W-5170 JULICH 1, GERMANY

来源：

CHEMICAL PHYSICS LETTERS | 1990年 / 168卷 / 02期

关键词：

D O I：

10.1016/0009-2614(90)85130-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have used polarized surface infrared spectroscopy in the multiple internal reflection mode to study the chemistry of NO adsorption on GaAs(110) at 90 K. NO is found to be reactive on the surface at these low temperatures, adsorbing dissociatively and molecularly. The reaction products identified are molecular N2O, oxygen end bonded with the molecular axis perpendicular to the surface, and a flat-lying hyponitrito species. Heating the surface above 200 K leaves an arsenic nitride on the surface. © 1990.

引用

页码：203 / 207

页数：5

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