GROWTH AND PROPERTIES OF PBTIO3 THIN-FILMS BY PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION

被引：28

作者：

KATAYAMA, T

FUJIMOTO, M

SHIMIZU, M

SHIOSAKI, T

机构：

[1] Department of Electronics, Kyoto University, Sakyo-ku, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期

关键词：

PHOTOENHANCED CVD; PBTIO3; FILM; UV LIGHT IRRADIATION; NO-2; LOW-TEMPERATURE GROWTH; PEROVSKITE STRUCTURE; DIELECTRIC LOSS FACTOR; RESISTIVITY; STEP COVERAGE;

D O I：

10.1143/JJAP.30.2189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoenhanced chemical vapor deposition (CVD) of PbTiO3 thin films was carried out using tetraethyl lead, titanium tetraisopropoxide and nitrogen dioxide. The use of NO2 and UV light irradiation during the growth run affected the crystalline quality and dielectric properties of films. The photodeposited films with a perovskite structure were obtained on sapphire at substrate temperatures above 530-degrees-C. In this study, it was found that the photodissociation of NO2 played an important role in decreasing the growth temperature. The step coverage characteristics of films were also investigated.

引用

页码：2189 / 2192

页数：4

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