PHOTOCONDUCTION IN GERMANIUM AND PHOSPHORUS DOPED SILICA WAVE-GUIDES

被引：12

作者：

KASHYAP, R

MAXWELL, GD

WILLIAMS, DL

机构：

[1] Research Department, BT Laboratories, Martlesham Heath

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.109019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconduction measurements on Ge-P doped silica planar ridge waveguides exposed to several miliwatts of ultraviolet radiation are reported. It is shown that there is a strong reduction in the photocurrent with time of exposure pointing to a depletion in the available photoactivated carriers. The density of defects is directly inferred from the measurements.

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页码：214 / 216

页数：3

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