HIGH REFLECTIVITY 1.55-MU-M (AL)GAASSB/ALASSB BRAGG REFLECTOR LATTICE-MATCHED ON INP SUBSTRATES

被引：39

作者：

LAMBERT, B

TOUDIC, Y

ROUILLARD, Y

GAUNEAU, M

BAUDET, M

ALARD, F

VALIENTE, I

SIMON, JC

机构：

[1] France Telecom, CNET LAB/RIO, 22301 Lannion

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates. © 1995 American Institute of Physics.

引用

收藏

页码：442 / 444

页数：3

相关论文

共 8 条

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[2]

CHAO FS, 1991, APPL PHYS LETT, V59, P2820

[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].

CHERNG, MJ ;

STRINGFELLOW, GG ;

COHEN, RM .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679

[4] MOVPE GROWTH OF GAINASSB [J].

CHERNG, MJ ;

JEN, HR ;

LARSEN, CA ;

STRINGFELLOW, GB ;

LUNDT, H ;

TAYLOR, PC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :408-417

[5]

KLEM J, 1987, APPL PHYS LETT, V50, P1365

[6] HIGH REFLECTIVITY 1.55 MU-M (AL)GASB/ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY [J].

LAMBERT, B ;

TOUDIC, Y ;

ROUILLARD, Y ;

BAUDET, M ;

GUENAIS, B ;

DEVEAUD, B ;

VALIENTE, I ;

SIMON, JC .

APPLIED PHYSICS LETTERS, 1994, 64 (06) :690-691

[7] OPTICAL-PROPERTIES OF GASB-ALSB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

LAMBERT, B ;

TOUDIC, Y ;

ROUILLARD, Y ;

BAUDET, M ;

GUENAIS, B ;

DEVEAUD, B ;

VALIENTE, I ;

SIMON, JC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3) :185-188

[8] GROWTH AND CHARACTERIZATION OF GAAS0.5SB0.5 LATTICE-MATCHED TO INP BY MOLECULAR-BEAM EPITAXY [J].

NAKATA, Y ;

FUJII, T ;

SANDHU, A ;

SUGIYAMA, Y ;

MIYAUCHI, E .

JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) :655-658