ROOM-TEMPERATURE OPERATION OF 650 NM ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

SAKU, T

IWAMURA, H

HIRAYAMA, Y

SUZUKI, Y

OKAMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 02期

关键词：

D O I：

10.1143/JJAP.24.L73

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L73 / L75

页数：3

共 15 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
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NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[2] BURHAM RD, 1982, APPL PHYS LETT, V41, P228
[3] CASEY HC, 1978, HETEROSTRUCTURE LA A
[4] VERY SHORT WAVELENGTH (621.4 NM) ROOM-TEMPERATURE PULSED OPERATION OF INGAASP LASERS
FUJIMOTO, A
YASUDA, H
SHIMURA, M
YAMASHITA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L488 - L490
[5] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[6] YELLOW-EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
HONDA, M
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 964 - 966
[7] COMPARISON BETWEEN GAAS AND ALXGA1-XAS QUANTUM WELLS IN THE LIGHT-EMISSION LIMIT
IWAMURA, H
SAKU, T
HIRAYAMA, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02): : L101 - L103
[8] TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS
KAJIMURA, T
KURODA, T
YAMASHITA, S
NAKAMURA, M
UMEDA, J
[J]. APPLIED OPTICS, 1979, 18 (11): : 1812 - 1815
[9] HIGH-PRESSURE MEASUREMENTS ON VISIBLE SPECTRUM ALXGA1-XAS HETEROSTRUCTURE LASERS - 7100-6750-A 300-K OPERATION
KIRCHOEFER, SW
MEEHAN, K
HOLONYAK, N
GULINO, DA
DRICKAMER, HG
BURNHAM, RD
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 406 - 407
[10] KOBAYASHI K, 1984, 16TH INT C SOL STAT

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