MODELING TRANSPORT IN SUBMICRON STRUCTURES USING THE RELAXATION-TIME BOLTZMANN-EQUATION

被引：10

作者：

GEURTS, BJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 47期

关键词：

D O I：

10.1088/0953-8984/3/47/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a systematic evaluation of transport properties of semiconducting submicron structures as predicted by computer simulations based on the Boltzmann equation. The influence of variations in the relaxation time of the collision process and the geometry of a model n+nn+-diode are studied. Both ballistic and non-ballistic situations are considered and compared to approximating moment models. Already small ballistic effects, showing up as non-uniform features in the high velocity behaviour of the distribution function, cause considerable error in the moment model predictions for the I-V characteristics.

引用

页码：9447 / 9458

页数：12

共 20 条

[1] SEMICLASSICAL HIGH-FIELD TRANSPORT-EQUATIONS FOR NONPARABOLIC HETEROSTRUCTURE DEGENERATE SEMICONDUCTORS [J].