Difference in microstructure between PZT thin films on Pt/Ti and those on Pt

被引:36
作者
Hase, T
Sakuma, T
Amanuma, K
Mori, T
Ochi, A
Miyasaka, Y
机构
[1] NEC Corporation, Kawasaki 216, Miyamae-ku
关键词
D O I
10.1080/10584589508012303
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
PZT thin films were synthesized by sol-gel on a Pt/Ti double layer bottom electrode or on a Pt single layer bottom electrode to investigate the bottom electrode dependence of PZT film structure. On Pt/Ti, <111> oriented perovskite grains with 50 - 100 nm lateral size were densely packed. On Pt, large perovskite grains (2-3 mu m) were surrounded by fine pyrochlore grains (about 5 nm), and no certain orientation was observed. TEM and EDX analyses suggested that a fraction of Ti in the Pt/Ti layer diffused along Pt grain boundaries up to the Pt surface and was oxidized during the PZT annealing process. A model for the crystallization of sol-gel derived PZT was proposed, in which TiOx particles at the Pt surface act as nucleation sites for PZT crystallization. This model well explained the experimental results.
引用
收藏
页码:89 / 98
页数:10
相关论文
共 5 条
[1]  
ALSHAREEF HN, 1992, 4TH P INT S INT FERR, P181
[2]   FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED PB(ZR, TI)O3 THIN-FILMS [J].
AMANUMA, K ;
MORI, T ;
HASE, T ;
SAKUMA, T ;
OCHI, A ;
MIYASAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9B) :4150-4153
[3]   EFFECTS OF ANNEAL AMBIENTS AND PT THICKNESS ON PT/TI AND PT/TI/TIN INTERFACIAL REACTIONS [J].
OLOWOLAFE, JO ;
JONES, RE ;
CAMPBELL, AC ;
HEGDE, RI ;
MOGAB, CJ ;
GREGORY, RB .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1764-1772
[4]  
SPIERINGS GAC, 1992, P 4 INT S INT FERR, P280
[5]   INVESTIGATION OF PT/TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION [J].
SREENIVAS, K ;
REANEY, I ;
MAEDER, T ;
SETTER, N ;
JAGADISH, C ;
ELLIMAN, RG .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :232-239