DRY ETCHING OF GAAS AND INP FOR OPTOELECTRONIC

被引：10

作者：

CARTER, AJ ^{[1
]}

THOMAS, B ^{[1
]}

MORGAN, DV ^{[1
]}

BHARDWAJ, JK ^{[1
]}

MCQUARRIE, AM ^{[1
]}

STEPHENS, MA ^{[1
]}

机构：

[1] SPECIAL RES SYST LTD,THORNBURY LABS,BRISTOL BS12 1NP,ENGLAND

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1049/ip-j.1989.0002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2 / 5

页数：4

共 18 条

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[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J].

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[8]

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[9]

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[10] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA [J].

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