DIAMOND COLD-CATHODE

被引:282
作者
GEIS, MW
EFREMOW, NN
WOODHOUSE, JD
MCALEESE, MD
MARCHYWKA, M
SOCKER, DG
HOCHEDEZ, JF
机构
[1] INTERFEROMETR INC,VIENNA,VA 22182
[2] USN,RES LAB,WASHINGTON,DC 20375
[3] UNIV SPACE RES ASSOC,WASHINGTON,DC 20024
关键词
D O I
10.1109/55.119164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Diamond cold cathodes have been formed by fabricating mesa-etched diodes using carbon ion implantation into p-type diamond substrates. When these diodes are forward biased, current is emitted into vacuum. The cathode efficiency (emitted current divided by diode current) varies from 2 x 10(-4) to 1 x 10(-10) and increases with the addition of 10(-2)-torr partial pressure of O2 into the vacuum system. Current densities of 0.1 to 1 A.cm-2 are estimated for a diode current of 10 mA. This compares favorably with Si cold cathodes (not coated with Cs), which have efficiencies of approximately 2 x 10(-5) and current densities of approximately 2 x 10(-2) A.cm-2. We believe that higher current densities and efficiencies can be obtained with more efficient cathode designs and an ultrahigh-vacuum environment.
引用
收藏
页码:456 / 459
页数:4
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