INFLUENCE OF GALLIUM DOPING ON SURFACE-PROPERTIES OF CD0.99MN0.01TE

被引：2

作者：

BIEG, B

KUZMINSKI, S

机构：

[1] Institute of Physics, Technical University of Wrocław, 50-370 Wrocław

来源：

VACUUM | 1994年 / 45卷 / 2-3期

关键词：

D O I：

10.1016/0042-207X(94)90163-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface photovoltage spectroscopy (SPS) investigations have been carried out for Cd0.99Mn0.01Te single crystals doped with gallium, in the temperature range between 80 and 300 K at a pressure of 10(-4) Pa, using a modified Kelvin method. The influence of gallium doping on the conductivity type, sign and height of the surface voltage barrier has been stated. The energies of the surface states, acceptor and donor bulk levels localized in the energy gap have been determined

引用

页码：171 / 173

页数：3