PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：92

作者：

KHAN, MA ^{[1
]}

SKOGMAN, RA ^{[1
]}

SCHULZE, RG ^{[1
]}

GERSHENZON, M ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.94363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：492 / 494

页数：3

共 8 条

[1]

BARANOV B, 1978, PHYS STATUS SOLIDI A, V49, pG29

[2] OPTICAL PROPERTIES OF SILVER AND CUPROUS HALIDES [J].

CARDONA, M .

PHYSICAL REVIEW, 1963, 129 (01) :69-+

[3] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[4]

GERSHENZON M, 1981, 1981 P INT OPT WORKS, P55

[5]

HAGAN J, 1978, J PHYS C SOLID STATE, V11, pL143

[6] ELECTRICAL-PROPERTIES AND ION-IMPLANTATION OF EPITAXIAL GAN, GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KHAN, MA ;

SKOGMAN, RA ;

SCHULZE, RG ;

GERSHENZON, M .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :430-432

[7]

PANKOVE JI, 1975, RCA REV, V36, P163

[8] PROPERTIES OF ALXGA1-XN FILMS PREPARED BY REACTIVE MOLECULAR-BEAM EPITAXY [J].

YOSHIDA, S ;

MISAWA, S ;

GONDA, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6844-6848

← 1 →