ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE

被引：18

作者：

BOBB, LC

HOLLOWAY, H

MAXWELL, KH

ZIMMERMA.E

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1966年 / 27卷 / 10期

关键词：

D O I：

10.1016/0022-3697(66)90248-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1679 / &

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