共 19 条
[2]
QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS
[J].
PHYSICAL REVIEW B,
1986, 33 (08)
:5435-5449
[3]
CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE
[J].
PHYSICAL REVIEW B,
1985, 32 (08)
:5149-5155
[4]
DELGIUDICE M, PHYS REV B
[5]
DELGIUDICE M, SURF SCI
[6]
DUKE CB, 1985, J VAC SCI TECHNOL B, V3, P1120
[7]
MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
[J].
PHYSICAL REVIEW B,
1984, 30 (12)
:7370-7373