INFLUENCE OF STATISTICAL DOPANT FLUCTUATIONS ON MOS-TRANSISTORS WITH DEEP SUBMICRON CHANNEL LENGTHS

被引：11

作者：

MIKOLAJICK, T

RYSSEL, H

机构：

[1] 8520 Erlangen

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

MOSFET devices;

D O I：

10.1016/0167-9317(93)90103-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of statistical doping fluctuations on the threshold voltage of a MOS transistor is examined. It is found that for transistors with a channel area of less than 0.1 mum2 (corresponding to a channel length of 0.1 mum with a W/L ratio of 10) statistical doping fluctuations will result in significant fluctuations of the threshold voltage.

引用

页码：419 / 422

页数：4

共 5 条

[1]

Hoeneisen, Mead, Fundamental Limitations in Microelectronics-I. MOS Technology, Solid-State Electron, 15, pp. 819-829, (1972)

[2]

Bate, Nanoelectronics, Solid State Technology, pp. 101-107, (1989)

[3]

Ridley, The effect of Random Doping Fluctuations on the Fermi Level in a Semiconductor, Semiconductor Science and Technology, 3, pp. 286-291, (1987)

[4]

Sze, Physics of Semiconductor Devices, (1981)

[5]

Papoulis, Probability, Random Variables and Stochastic Processes, (1965)

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