EXCITONS AT L ABSORPTION EDGE IN ZINC BLENDE-TYPE SEMICONDUCTORS

被引：58

作者：

CARDONA, M

HARBEKE, G

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.8.90

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：90 / &

共 6 条

CARDONA, M .

[2] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J].

DRESSELHAUS, G .

[3] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[4] ON THE THEORY OF EXCITONS IN SOLIDS [J].

HAKEN, H .

[5] EXCITON ENERGY LEVELS IN GERMANIUM AND SILICON [J].

MCLEAN, TP ;

LOUDON, R .

[6] EXPERIMENTAL INVESTIGATIONS OF EXCITON SPECTRA IN IONIC CRYSTALS [J].

NIKITINE, S .

PHILOSOPHICAL MAGAZINE, 1959, 4 (37) :1-31