DEEP LEVELS IN AS-GROWN AND SI-IMPLANTED IN0.2GA0.8AS-GAAS STRAINED-LAYER SUPERLATTICE OPTICAL GUIDING STRUCTURES

被引：11

作者：

DHAR, S

DAS, U

BHATTACHARYA, PK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：639 / 642

页数：4

共 17 条

[1] STRUCTURAL INTEGRITY OF ION-IMPLANTED IN0.2GA0.8AS GAAS STRAINED-LAYER SUPERLATTICE [J].

ARNOLD, GW ;

PICRAUX, ST ;

PEERCY, PS ;

MYERS, DR ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :382-384

[2] COMPARISON OF TRAPPING LEVELS IN GAASP STRAINED-LAYER SUPERLATTICE STRUCTURES AND IN THEIR BUFFER LAYERS [J].

BARNES, CE ;

BIEFELD, RM ;

ZIPPERIAN, TE ;

OSBOURN, GC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :408-410

[3] PHOTOREFRACTIVE EFFECTS IN LINBO3 CHANNEL WAVE-GUIDES - MODEL AND EXPERIMENTAL-VERIFICATION [J].

BECKER, RA ;

WILLIAMSON, RC .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1024-1026

[4] MATERIAL PROPERTIES AND OPTICAL GUIDING IN INGAAS-GAAS STRAINED LAYER SUPERLATTICES - A BRIEF REVIEW [J].

BHATTACHARYA, PK ;

DAS, U ;

JUANG, FY ;

NASHIMOTO, Y ;

DHAR, S .

SOLID-STATE ELECTRONICS, 1986, 29 (02) :261-267

[5] IMPURITY AND DEFECT LEVELS IN BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BHATTACHARYA, PK ;

BUHLMANN, HJ ;

ILEGEMS, M ;

STAEHLI, JL .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6391-6398

[6] DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BLOOD, P ;

HARRIS, JJ .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :993-1007

[7] VARIATION OF REFRACTIVE-INDEX IN STRAINED INXGA1-XAS-GAAS HETEROSTRUCTURES [J].

DAS, U ;

BHATTACHARYA, PK .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :341-344

[8]

DAS U, 1986, 12TH P INT S GAAS RE, P427

[9] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5738-5745

[10] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

GOSSARD, AC ;

ILEGEMS, M ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

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