DEEP LEVELS IN AS-GROWN AND SI-IMPLANTED IN0.2GA0.8AS-GAAS STRAINED-LAYER SUPERLATTICE OPTICAL GUIDING STRUCTURES

被引：11

作者：

DHAR, S

DAS, U

BHATTACHARYA, PK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：639 / 642

页数：4

共 17 条

[11] STUDY OF MAIN ELECTRON TRAP IN GA1-XINXAS ALLOYS [J].

MIRCEA, A ;

MITONNEAU, A ;

HALLAIS, J .

PHYSICAL REVIEW B, 1977, 16 (08) :3665-3675

[12] HOLE TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MITONNEAU, A ;

MARTIN, GM ;

MIRCEA, A .

ELECTRONICS LETTERS, 1977, 13 (22) :666-668

[13] INVESTIGATION OF MOLECULAR-BEAM EPITAXIAL IN0.53GA0.47AS REGROWN ON LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS/INP [J].

NASHIMOTO, Y ;

DHAR, S ;

HONG, WP ;

CHIN, A ;

BERGER, P ;

BHATTACHARYA, PK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :540-542

[14] A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE [J].

OSBOURN, GC ;

BIEFELD, RM ;

GOURLEY, PL .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :172-174

[15] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].

OSBOURN, GC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589

[16] CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

SKROMME, BJ ;

BOSE, SS ;

LOW, TS ;

LEPKOWSKI, TR ;

DEJULE, RY ;

STILLMAN, GE ;

HWANG, JCM .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4685-4702

[17] GROWTH-PARAMETER DEPENDENCE OF DEEP LEVELS IN MOLECULAR-BEAM-EPITAXIAL GAAS [J].

STALL, RA ;

WOOD, CEC ;

KIRCHNER, PD ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (05) :171-172

← 1 2 →