ELECTRIC-FIELD SCREENING BY PHOTOGENERATED HOLES IN MULTIPLE QUANTUM-WELLS - A NEW MECHANISM FOR ABSORPTION SATURATION

被引：121

作者：

WOOD, TH ^{[1
]}

PASTALAN, JZ ^{[1
]}

BURRUS, CA ^{[1
]}

JOHNSON, BC ^{[1
]}

MILLER, BI ^{[1
]}

DEMIGUEL, JL ^{[1
]}

KOREN, U ^{[1
]}

YOUNG, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期

关键词：

D O I：

10.1063/1.103539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe saturation in the electroabsorption of InGaAs/InP multiple quantum wells (MQWs) at high optical intensity. Contrary to the mechanism for zero-field MQWs, we find that saturation occurs due to the presence of trapped photogenerated holes that screen the MQWs from the applied electric field. By carefully measuring the absorption coefficient of the wells and the emission time for holes, we are able to fit the observed electroabsorption saturation with no adjustable parameters.

引用

页码：1081 / 1083

页数：3

共 15 条

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