BAND-STRUCTURE AND HIGH-PRESSURE PHASE-TRANSITION IN GAN, ALN, INN AND BN

被引:27
作者
GORCZYCA, I [1 ]
CHRISTENSEN, NE [1 ]
机构
[1] UNIPRESS,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND
来源
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90270-G
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The linear muffin-tin orbital method is used to calculate the band structure and to investigate the structural properties of III-V nitrides under high pressure. The obtained pressure coefficients of energy gaps, dielectric constants, bulk moduli and phase transition pressures are compared with existing theoretical and experimental data.
引用
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页码:410 / 414
页数:5
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