ELECTRONIC-STRUCTURE OF THE SI6/(SI0.5GE0.5)6001 SUPERLATTICES

被引：1

作者：

BASS, JM

MATTHAI, CC

机构：

[1] Dept. of Phys., Univ. of Wales Coll. of Cardiff

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 02期

关键词：

D O I：

10.1088/0268-1242/6/2/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using ab initio pseudopotentials we have calculated the electronic structure of the Si6/(Si0.5Ge0.5)6 superlattices strained to Si, Si0.75Ge0.25 and Si0.5Ge0.5 (001) orientated substrates. We find that none of these materials displays direct gaps. We have also calculated the valence band offsets of the Si/Si0.5Ge0.5 [001] interface for different strain configurations and found them not to be simply one half of those of the Si/Ge interface for the same strains.

引用

页码：109 / 111

页数：3

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