CHANNELING IMPLANTATION OF B AND P IN SILICON

被引：23

作者：

SCHREUTELKAMP, RJ

RAINERI, V

SARIS, FW

KAIM, RE

WESTENDORP, JFM

VANDERMEULEN, PFHM

JANSSEN, KTF

机构：

[1] VARIAN EXTR DIV,BEVERLY,MA 01915

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96243-E

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Highly uniform profiles of B and P ions have been obtained by channeling implantations in 150 mm diameter Si(100) wafers. Large differences in penetration depth, doping depth profiles and implantation damage are observed between implantations under channeling and random conditions for a wide range of doses and ion energies using Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy and secondary-ion mass spectrometry.

引用

页码：615 / 619

页数：5

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