CHARACTERIZATION OF THE INTERFACE ENERGETICS FOR N-TYPE CADMIUM SELENIDE NON-AQUEOUS ELECTROLYTE JUNCTIONS

被引：19

作者：

ARUCHAMY, A

BRUCE, JA

TANAKA, S

WRIGHTON, MS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 02期

关键词：

D O I：

10.1149/1.2119711

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：359 / 364

页数：6

共 25 条

[1] A COMPARISON OF THE INTERFACE ENERGETICS FOR N-TYPE CADMIUM SULFIDE-NONAQUEOUS AND CADMIUM TELLURIDE-NONAQUEOUS ELECTROLYTE JUNCTIONS [J].

ARUCHAMY, A ;

WRIGHTON, MS .

JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (22) :2848-2854

[2] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].

BARD, AJ ;

BOCARSLY, AB ;

FAN, FRF ;

WALTON, EG ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677

[3]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[4] VISIBLE LIGHT TO ELECTRICAL ENERGY-CONVERSION - STABLE CADMIUM-SULFIDE AND CADMIUM SELENIDE PHOTOELECTRODES IN AQUEOUS-ELECTROLYTES [J].

ELLIS, AB ;

KAISER, SW ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1976, 98 (06) :1635-1637

[5] STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES [J].

ELLIS, AB ;

KAISER, SW ;

BOLTS, JM ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (09) :2839-2848

[6] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[7] ELECTROCHEMICAL PHOTO AND SOLAR CELLS - PRINCIPLES AND SOME EXPERIMENTS [J].

GERISCHER, H .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1975, 58 (01) :263-274

[8] FLATBAND POTENTIAL OF CADMIUM-SULFIDE (CDS) PHOTOANODES AND ITS DEPENDENCE ON SURFACE ION EFFECTS [J].

GINLEY, DS ;

BUTLER, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :1968-1974

[9] PERFORMANCE OF SYNTHETICAL N-MOSE2 IN ELECTROCHEMICAL SOLAR-CELLS [J].

GOBRECHT, J ;

TRIBUTSCH, H ;

GERISCHER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :2085-2086

[10] PHOTOELECTROCHEMICAL REACTIONS AND FORMATION OF INVERSION-LAYERS AT NORMAL-TYPE MOS2-ELECTRODES, MOSE2-ELECTRODES, AND WSE2-ELECTRODES IN APROTIC-SOLVENTS [J].

KAUTEK, W ;

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (07) :645-653

← 1 2 3 →