DIELECTRIC-BREAKDOWN IN MONOMOLECULAR LAYERS

被引:6
作者
BARRAUD, A [1 ]
ROSILIO, A [1 ]
机构
[1] CEN SACLAY,BP NO 2,91190 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1016/0040-6090(76)90371-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:243 / 251
页数:9
相关论文
共 26 条
[1]   TEMPERATURE-DEPENDENCE OF BREAKDOWN FIELD IN BARIUM STEARATE MULTILAYER FILMS [J].
AGARWAL, DK ;
SRIVASTAVA, VK .
THIN SOLID FILMS, 1972, 14 (02) :367-371
[2]   THICKNESS DEPENDENCE OF BREAKDOWN FIELD IN THIN FILMS [J].
AGARWAL, VK ;
SRIVASTAVA, VK .
THIN SOLID FILMS, 1971, 8 (05) :377-+
[3]  
AUSTEN EW, 1940, P PHYS SOC LOND A, V176, P33
[4]  
BARRAUD A, 1971, COLLOQUE AVISEM VERS, P341
[5]  
BARRAUD A, 1970, COLLOQ INT MICROELEC, P845
[6]  
BARRAUD A, 1974, 8 INT C EL MICR AUST, V1, P682
[7]   FORMATIVE PROCESSES IN ELECTRIC BREAKDOWN OF POTASSIUM BROMIDE [J].
COOPER, R ;
ELLIOTT, CT .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (04) :481-&
[8]  
FROLICH H, 1940, REP ERA LT, V113
[9]  
FROLICH H, 1947, P ROY SOC A, V188, P521
[10]   LANGMUIR-BLODGETT MULTI-MONOLAYERS AS THIN FILM DIELECTRICS [J].
HOLT, L .
NATURE, 1967, 214 (5093) :1105-&