MOLECULAR-BEAM-EPITAXIAL GROWTH AND CHARACTERIZATION OF IN2 TE3

被引：20

作者：

GOLDING, TD

BOYD, PR

MARTINKA, M

AMIRTHARAJ, PM

DINAN, JH

机构：

[1] USA,CTR NIGHT VIS & ELECTROOPT,AMSEL RD NV IT,FT BELVOIR,VA 22060

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] UNIV WALES UNIV COLL CARDIFF,DEPT PHYS,CARDIFF CF1 1XL,S GLAM,WALES

[4] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1936 / 1941

页数：6

共 18 条

[1]

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[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB CDTE HETEROJUNCTIONS FOR MULTILAYER STRUCTURES [J].

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[3]

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[4]

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[6]

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[7]

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[8] INSB-CDTE INTERFACES - A COMBINED STUDY BY SOFT-X-RAY PHOTOEMISSION, LOW-ENERGY ELECTRON-DIFFRACTION, AND RAMAN-SPECTROSCOPY [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1233-1238

[9] CHEMICAL AND ELECTRONIC-STRUCTURE OF INSB-CDTE INTERFACES [J].

MACKEY, KJ ;

ALLEN, PMG ;

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WILLIAMS, GM .

APPLIED PHYSICS LETTERS, 1986, 49 (06) :354-356

[10] RAMAN-SPECTRUM OF INTE AND TLSE SINGLE-CRYSTALS [J].

NIZAMETDINOVA, MA .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 97 (01) :K9-K12

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