EFFECT OF SI ON PHOTOLUMINESCENCE OF GAN

被引：21

作者：

KHAN, MRH

OHSHITA, Y

SAWAKI, N

AKASAKI, I

机构：

[1] Nagoya Univ, Dep of Electronics,, Nagoya, Jpn, Nagoya Univ, Dep of Electronics, Nagoya, Jpn

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 57卷 / 06期

关键词：

Acknowledgements : The authors wish to express their sincere gratitude to Professor M.Sajl of Nagoya Institute of Technology through whom the study of Auger Electron Spectroscopy was possible; and to Mr. Y.Adachi and Professor H.Sakao of the Department of Metallurgical Engineering; Nagoya University for their help in X-ray Micro Analysis. This work was partly supported by the Hoso-Bunka foundation;

D O I：

10.1016/0038-1098(86)90479-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：405 / 409

页数：5

共 14 条

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[10] OHKI Y, 1982, I PHYS C SER, V63, P479

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