CHEMICAL-MECHANICAL POLISHING OF METALORGANIC CHEMICAL-VAPOR-DEPOSITED GOLD FOR LSI INTERCONNECTION

被引：8

作者：

HOSHINO, M

SUEHIRO, H

KASAI, K

KOMENO, J

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期

关键词：

CHEMICAL MECHANICAL POLISH; CMP; LSI; INTERCONNECTION; MOCVD; OMCVD; DMAU(HFAC); DMG(HFAC); GOLD FILMS; LINE FILL;

D O I：

10.1143/JJAP.32.L392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used a KI + I2 + H2O solution and silica powder for chemical-mechanical polishing of metalorganic chemical-vapor-deposited gold. We used our technique to produce interconnection lines and plugs for LSI device multilayer interconnection. We obtained a flat surface for lines and vias filled with gold.

引用

页码：L392 / L394

页数：3

共 9 条

[1]

BEYER KD, 1990, Patent No. 4944836

[2]

HOLLOWAY K, 1991, MATER RES SOC SYMP P, V204, P409

[3] SURFACE-MORPHOLOGY AND LINE FILL PROPERTIES OF GOLD GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].