FAST PHOTOCONDUCTIVE GAAS DETECTORS MADE BY LASER STIMULATED MOCVD

被引：5

作者：

ROTH, W

SCHUMACHER, H

BENEKING, H

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 04期

关键词：

D O I：

10.1049/el:19830100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：142 / 143

页数：2

共 6 条

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AUSTON, DH ;

JOHNSON, AM ;

SMITH, PR ;

BEAN, JC .

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[2] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J].

BENEKING, H .

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[3] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J].

GAMMEL, JC ;

OHNO, H ;

BALLANTYNE, JM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :269-272

[4] HIGH PEAK POWER PICOSECOND LIGHT-PULSES FROM A DIRECTLY MODULATED SEMICONDUCTOR-LASER [J].

KLEIN, HJ ;

BIMBERG, D ;

BENEKING, H ;

KUHL, J ;

GOBEL, EO .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :394-396

[5] ULTRAFAST THIN-FILM GAAS PHOTOCONDUCTIVE DETECTORS [J].

KLEIN, HJ ;

BIMBERG, D ;

BENEKING, H .

THIN SOLID FILMS, 1982, 92 (03) :273-279

[6]

ROTH W, 1982, NOV MRS ANN M BOST

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