CONTROL OF SCHOTTKY-DIODE-BARRIER HEIGHT BY LANGMUIR-BLODGETT MONOLAYERS

被引：11

作者：

WINTER, CS

TREDGOLD, RH

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1983年 / 130卷 / 05期

关键词：

D O I：

10.1049/ip-i-1.1983.0045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER

引用

页码：256 / 259

页数：4

共 15 条

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