TRANSITION PROBABILITY OF IMPACT IONIZATION IN SILICON

[1] ANTONCIK E, 1966, SEMICONDUCTOR SEMIME, V2

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[3] BEATTIE AR, 1959, P ROY SOC, VA249, P16

[4] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[5] FRANZ W, 1956, HANDBUCH PHYSIK, P190

[6] BAND STRUCTURE OF SILICON FROM AN ADJUSTED HEINE-ABARENKOV CALCULATION [J]. PHYSICAL REVIEW, 1966, 146 (02): : 558 - +

[7] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[1] ANTONCIK E, 1966, SEMICONDUCTOR SEMIME, V2

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[3] BEATTIE AR, 1959, P ROY SOC, VA249, P16

[4] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[5] FRANZ W, 1956, HANDBUCH PHYSIK, P190

[6] BAND STRUCTURE OF SILICON FROM AN ADJUSTED HEINE-ABARENKOV CALCULATION [J]. PHYSICAL REVIEW, 1966, 146 (02): : 558 - +

[7] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +