SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS - COMMENTS

被引：3

作者：

DUVVURY, C

BAGLEE, DAG

DUANE, MP

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期

关键词：

D O I：

10.1109/EDL.1984.26015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：533 / 534

页数：2

共 8 条

[1]

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[2] AN ANALYTICAL METHOD FOR DETERMINING INTRINSIC DRAIN SOURCE RESISTANCE OF LIGHTLY DOPED DRAIN (LDD) DEVICES [J].

DUVVURY, C ;

BAGLEE, D ;

DUANE, M ;

HYSLOP, A ;

SMAYLING, M ;

MAEKAWA, M .

SOLID-STATE ELECTRONICS, 1984, 27 (01) :89-96

[3]

Duvvury C., 1983, International Electron Devices Meeting 1983. Technical Digest, P388

[4]

HSU ST, 1983, RCA REV, V44, P424

[5] ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS [J].

LAUX, SE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1245-1251

[6] SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS [J].

SHEU, BJ ;

HU, C ;

KO, PK ;

HSU, FC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :365-367

[7] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J].

SUCIU, PI ;

JOHNSTON, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1846-1848

[8] A NEW AC MEASUREMENT TECHNIQUE TO ACCURATELY DETERMINE MOSFET CONSTANTS [J].

THOMA, MJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1113-1116

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