THE ETCHING OF INP IN HCL SOLUTIONS - A CHEMICAL MECHANISM

被引：81

作者：

NOTTEN, PHL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期

关键词：

D O I：

10.1149/1.2115375

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2641 / 2644

页数：4

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[8] ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL BEHAVIOR AND SELECTIVE ETCHING OF III-V SEMICONDUCTORS IN H2O2 AS REDOX SYSTEM [J].

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