HIGH-DETECTIVITY INAS0.85SB0.15/INAS INFRARED (1.8-4.8 MU-M) DETECTORS

We report the operation of broadband InAs//0//. //8//5Sb//0//. //1//5 pn-junction photodetectors grown on InAs by liquid phase epitaxy. Despite the relatively large mismatch ( approximately equals 1%) between the layers and the substrate the devices exhibit excellent zero bias detectivities (D*(70 K) equals (1. 5 multiplied by 10**1**1 cm(Hz)** one-half /W; D* (200 K) equals 2 multiplied by 10**1**0 cm(Hz)** one-half /W at lambda equals 3. 5 mu m) and peak external quantum efficiencies of 40%.