INFLUENCE OF SUBSTRATE TEMPERATURE ON ELECTRICAL PROPERTIES OF THIN INSB FILMS FLASH-EVAPORATED ONTO GLASS

被引：7

作者：

BURVENICH, XM ^{[1
]}

机构：

[1] STATE UNIV GHENT, LAB ELECTR, B-9000 GHENT, BELGIUM

来源：

关键词：

D O I：

10.1016/0040-6090(75)90014-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：129 / 134

页数：6

共 10 条

[1] PREPARATION OF HIGH MOBILITY INSB THIN FILMS
CARROLL, JA
SPIVAK, JF
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 383 - &
[2] DAVIS NM, 1967, 9 IEEE S EL ION LAS, P254
[3] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279
[4] GUNTHER KG, 1966, USE THIN FILMS PHYSI, P225
[5] KOIKE R, 1964, JPN J APPL PHYS, V3, P191
[6] CARRIER MOBILITY AND FIELD-EFFECT IN THIN INDIUM-ANTIMONIDE FILMS
LING, CH
FISHER, JH
ANDERSON, JC
[J]. THIN SOLID FILMS, 1972, 14 (02) : 267 - 288
[7] MEY GD, 1973, AEU-ARCH ELEKTRON UB, V27, P309
[8] SINGLE CRYSTAL INSB THIN FILMS BY ELECTRON BEAM RE-CRYSTALLIZATION
TEEDE, NF
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1069 - &
[9] WIEDER H, 1970, INTERMETALLIC SEMICO, P20
[10] ZONE MELTING OF INDIUM ANTIMONIDE FILMS USING A HOT WIRE
WILLIAMSON, WJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 765 - +