HIGH-FIELD ELECTRON-CAPTURE AND EMISSION IN NITRIDED OXIDES

被引：31

作者：

TERRY, FL ^{[1
]}

WYATT, PW ^{[1
]}

NAIMAN, ML ^{[1
]}

MATHUR, BP ^{[1
]}

KIRK, CT ^{[1
]}

SENTURIA, SD ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2036 / 2039

页数：4

共 15 条

[1] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON [J].

CHANG, ST ;

JOHNSON, NM ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318

[2]

Chang T. T. L., 1982, International Electron Devices Meeting. Technical Digest

[3]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

TAMMINGA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002

[5]

Jenq C. S., 1982, International Electron Devices Meeting. Technical Digest, P811

[6] EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDE [J].

LAI, SK ;

DONG, DW ;

HARTSTEIN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2042-2044

[7]

Liang M., 1981, INT EL DEV M INT EL DEV M, P396

[8]

Naiman M. L., 1980, International Electron Devices Meeting. Technical Digest, P562

[9]

SAITOH M, 1982, 161ST EL SOC M MONTR

[10]

SCHMIDT MA, IEEE T ELECTRON DEVI

← 1 2 →