EFFECTS OF INTERFACES AND INTERFACE ROUGHNESS IN DILUTED MAGNETIC SEMICONDUCTOR MICROSTRUCTURES

In this work a numerical model of anti-ferromagnetic spin-pairing in diluted magnetic semiconductors is used to determine the paramagnetic behaviour of both abrupt and rough interfaces. A detailed study of the paramagnetic behaviour of the individual monolayers adjacent to an abrupt interface with a non-magnetic material has not only predicted quantitatively the enhanced paramagnetism in the ultimate monolayer, it has also predicted a depressed paramagnetism in the penultimate monolayer. Furthermore, the results of the theoretical model have been compared with experimental observations in order to gain insight into intrinsic and structural properties of heterojunctions in diluted magnetic semiconductors.