EFFECT OF STRESS ON GERMANIUM AND SILICON P-N JUNCTIONS

被引：55

作者：

KANDA, Y

机构：

来源：

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D O I：

10.1143/JJAP.6.475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：475 / &

共 36 条

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