THE EXPONENTIAL OPTICAL-ABSORPTION BAND TAIL OF HG1-XCDXTE

被引：151

作者：

FINKMAN, E

SCHACHAM, SE

机构：

[1] Technion-Israel Inst of Technology,, Microelectronics Research Cent,, Haifa, Isr, Technion-Israel Inst of Technology, Microelectronics Research Cent, Haifa, Isr

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2896 / 2900

页数：5

共 14 条

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[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 594 - +
[4] INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4356 - 4361
[5] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7099 - 7101
[6] OPTICAL ABSORPTION EDGE IN CDTE - EXPERIMENTAL
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[J]. PHYSICAL REVIEW, 1966, 150 (02): : 728 - &
[7] MICKLETHWAITE B, COMMUNICATION
[8] SAGINOV LD, 1982, SOV PHYS SEMICOND+, V16, P802
[9] SAGINOV LD, 1982, SOV PHYS SEMICOND+, V16, P298
[10] SAGINOV LD, 1979, SOV PHYS SEMICOND+, V13, P608

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