EXTREMELY HIGH CHARACTERISTIC TEMPERATURE T-0 OF 0.98-MU-M INGAAS/INGAP STRAINED-QUANTUM-WELL LASERS WITH GAAS/INGAP SUPERLATTICE OPTICAL CONFINEMENT LAYER

被引：3

作者：

USAMI, M

MATSUSHIMA, Y

TAKAHASHI, Y

机构：

[1] KDD R&D Laboratories, Kamifukuoka-shi, Saitama 356

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 03期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

D O I：

10.1049/el:19950137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 mu m InGaAs/InCaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL 'see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T-0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

引用

页码：192 / 193

页数：2

共 8 条

[1] SPECTRAL NOISE-FIGURE OF ER3+-DOPED FIBER AMPLIFIERS [J].