ULTRAVIOLET ELECTROLUMINESCENCE IN AIN

被引：46

作者：

RUTZ, RF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 07期

关键词：

D O I：

10.1063/1.88788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：379 / 381

页数：3

共 10 条

[1] ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE
COX, GA
CUMMINS, DO
KAWABE, K
TREDGOLD, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) : 543 - &
[2] SPACE CHARGE CONDUCTION AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE SINGLE CRYSTALS
Edwards, J.
Kawabe, K.
Stevens, G.
Tredgold, R. H.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (05) : 99 - 100
[3] ALUMINUM NITRIDE, A REFRACTORY FOR ALUMINUM TO 2000-DEGREE-C
LONG, G
FOSTER, LM
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (02) : 53 - 59
[4] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
MANASEVIT, HM
ERDMANN, FM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +
[5] MECHANISM OF LIGHT PRODUCTION IN METAL-INSULATOR-SEMICONDUCTOR DIODES - GAN - MG VIOLET LIGHT-EMITTING DIODES
MARUSKA, HP
STEVENSON, DA
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1171 - 1179
[6] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN
MARUSKA, HP
TIETJEN, JJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &
[7] RUTZ RF, 1974, SILICON CARBIDE 1973, P72
[8] SOME PROPERTIES OF ALUMINUM NITRIDE
TAYLOR, KM
LENIE, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) : 308 - 314
[9] ELECTROLUMINESCENCE OF A1N
WOLFF, GA
ADAMS, I
MELLICHAMP, JW
[J]. PHYSICAL REVIEW, 1959, 114 (05): : 1262 - 1264
[10] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
YIM, WM
STOFKO, EJ
ZANZUCCHI, PJ
PANKOVE, JI
ETTENBERG, M
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296

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