THE IMAGE-FORCE EFFECT AT A METAL-SEMICONDUCTOR CONTACT WITH AN INTERFACIAL INSULATOR LAYER

被引:20
作者
TUGULEA, A [1 ]
DASCALU, D [1 ]
机构
[1] POLYTECH INST BUCHAREST,DEPT ELECTR & COMMUN,R-77748 BUCHAREST,ROMANIA
关键词
D O I
10.1063/1.333816
中图分类号
O59 [应用物理学];
学科分类号
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页码:2823 / 2891
页数:69
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共 17 条
[11]   BARRIER LOWERING AND FIELD PENETRATION AT METAL-DIELECTRIC INTERFACES - (AL-SI02 - MOS STRUCTURES - E) [J].
MEAD, CA ;
SNOW, EH ;
DEAL, BE .
APPLIED PHYSICS LETTERS, 1966, 9 (01) :53-&
[12]  
RHODERICK EH, 1978, METAL SEMICONDUCTOR, P37
[13]  
SCHOTTKY W, 1914, PHYS Z, V15, P892
[15]  
Sze SM, 1981, PHYSICS SEMICONDUCTO, P250
[16]   INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES [J].
WU, CY .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3786-3789
[17]   THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES [J].
WU, CY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2909-2912