NEAR INFRARED ABSORPTION IN P-DOPED ZNTE CRYSTALS

[1] ATEN AC, 1962, REPORT INTERNATIONAL, P696

[2] BIRMAN JL, 1960, J ELECTROCHEM SOC, V107, P407

[3] FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 98 - +

[4] THEORY OF THE INFRARED ABSORPTION OF CARRIERS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1647 - 1652

[5] KOHN W, SOLID STATE PHYSICS, V5

[6] WATANABE N, TO BE PUBLISHED

[1] ATEN AC, 1962, REPORT INTERNATIONAL, P696

[2] BIRMAN JL, 1960, J ELECTROCHEM SOC, V107, P407

[3] FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 98 - +

[4] THEORY OF THE INFRARED ABSORPTION OF CARRIERS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1647 - 1652

[5] KOHN W, SOLID STATE PHYSICS, V5

[6] WATANABE N, TO BE PUBLISHED